By Norman G. Einspruch
Contains contributions from a dozen pros from the inner most area and academia. Discusses a number of machine physics subject matters of specific curiosity to and collage researchers in electric engineering, machine technology, and digital fabrics. Emphasizes actual description, mode
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Warfield, Carrier mobility and current saturation in the MOS transistor. IEEE Trans. Electron Devices ED-12, 129-138 (1965). R. S. Muller and T. I. Kamins, "Device Electronics for Integrated Circuits," 2nd ed. Wiley, N e w York, 1986. S. M. Sze, "Physics of Semiconductor Devices," 2nd ed. Wiley, N e w York, 1986. Y. P. Tsividis, "Operation and Modeling of the MOS Transistor," 1st ed. McGraw-Hill, N e w York, 1987. A. S. " Wiley, N e w York, 1967. V. G. K. Reddi and C. T. Sah, Source to drain resistance beyond pinch-off in M e t a l - O x i d e Semiconductor transistor.
The ionic range of boron + 60 A l a n G. Lewis a n d J o h n Y. C h e n is large, even at low implantation energies, and ion channeling plays a significant role even when the target wafers are tilted to minimize this p h e n o m e n o n . 35 |xm . The problem is further c o m p o u n d e d by the high diffusivity of boron. In C M O S technologies, both n- and /7-channel source/drain diffusions must be annealed and activated. A typical anneal used for an arsenic diffusion will cause significant ( > 0 .
J. Appl. Phys. 4 1 , 1825 (1969). 27. R. Coen and R. S. Muller, Velocity of surface carriers in inversion layers on silicon. Solid-State Electron. 23, 35-40 (1980). 28. J. A. Cooper and D. F. Nelson, Measurement of the high-field drift velocity of electron in inversion layer in silicon. IEEE Electron Device Lett. EDL-2(7), 169-173 (1983). 29. F. N. Trofimenkoff, Field-dependent mobility analysis of the field-effect transistor. Proc. IEEE 53, 1765-1766 (1965). 30. D. M. Caughey and R. E. Thomas, Carrier mobilities in silicon empirically related to doping and field.
Advanced MOS Device Physics by Norman G. Einspruch